Loaʻa i nā mea hoʻopili uila keleawe ʻo Tungsten ka haʻahaʻa haʻahaʻa haʻahaʻa o ka tungsten a me nā waiwai conductivity thermal kiʻekiʻe o ke keleawe.ʻO ka mea nui, ʻo ia ka mea hiki ke hoʻolālā ʻia ka mea hoʻonui wela a me ka conductivity thermal ma o ka hoʻoponopono ʻana i ke ʻano o ka mea i lawe ʻia i ka ʻoluʻolu.
Hoʻohana ʻo FOTMA i ka maʻemaʻe kiʻekiʻe a me nā mea waiwai kiʻekiʻe, a loaʻa iā WCu nā lako uila uila a me nā mea wela wela me ka hana maikaʻi loa ma hope o ke kaomi ʻana, kiʻekiʻe-mehana sintering a me ka infiltration.
1. ʻO ka tungsten copper electronic packaging material he adjustable thermal expansion coefficient, hiki ke hoʻohālikelike ʻia me nā substrates like ʻole (e like me: stainless steel, valve alloy, silicon, gallium arsenide, gallium nitride, aluminum oxide, etc.);
2. ʻAʻole hoʻohui ʻia nā mea hoʻonā sintering e mālama i ka conductivity thermal maikaʻi;
3. Haʻahaʻa porosity a maikaʻi ea tightness;
4. ʻO ka mana nui maikaʻi, ka hoʻopau ʻana i ka ʻili a me ka palahalaha.
5. Hāʻawi i ka pepa, nā ʻāpana i hana ʻia, hiki ke hoʻokō i nā pono o ka electroplating.
Papa Mea | Maʻiʻo Tungsten Wt% | ʻO ka mānoanoa g/cm3 | Hoʻonui wela ×10-6CTE(20℃) | ʻO ka hoʻoheheʻe wela W/(M·K) |
90WCu | 90±2% | 17.0 | 6.5 | 180 (25 ℃) /176 (100 ℃) |
85WCu | 85±2% | 16.4 | 7.2 | 190 (25 ℃)/ 183 (100 ℃) |
80WCu | 80±2% | 15.65 | 8.3 | 200 (25 ℃) / 197 (100 ℃) |
75WCu | 75±2% | 14.9 | 9.0 | 230 (25 ℃) / 220 (100 ℃) |
50WCu | 50±2% | 12.2 | 12.5 | 340 (25 ℃) / 310 (100 ℃) |
Nā mea kūpono no ka hoʻopili ʻana me nā mea mana kiʻekiʻe, e like me nā substrates, nā electrodes haʻahaʻa, etc.;nā papa alakaʻi kiʻekiʻe;nā papa hoʻomalu wela a me nā radiators no ka pūʻali koa a me nā mea hoʻokele wela kīwila.